Polished Wafer

Polished Wafer is a thin disc-shaped single crystal silicon substrate manufactured from high-purity poly-crystalline silicon by series of melting, crystal growth, cutting, polishing and washing processes. It is the most common wafer used to manufacture semiconductor chips.

Epitaxial Wafer

Epitaxial Wafer has a single crystal silicon layer on top of single crystal silicon substrate (Polished Wafer). They both have the same crystal structure, but Epitaxial layer differs in physical properties such as dropping, band gap and permittivity properties, yielding less defect density than the substrate. Therefore, it has superior structural and electrical properties to the original Polished Wafer, making it possible to improve performance on manufacturing extensive semiconductor devices.

FZ Wafer

Float Zone (FZ) crystal growing method is one of the first attempted approaches on Ingot growing, initially developed in the early 1960s. FZ method is characterized by high resistivity value and low oxygen concentration, which are mandatory for high purified single crystal manufacturing.

FZ Wafer

Oxidation Wafer Oxidation Wafer is an electrical insulator wafer, processed at a high temperature, which allows Polished Wafer to have oxide film on its surface. It is used as a field oxide for electrical insulating gate of MOS transistors and other various structures inside chips. Oxidation is done in either Dry or Wet methods. The characteristics of each type are on the following diagram.

Metal Deposition Wafer Metal Deposition Wafer is coated with variety of metal films for semiconductor manufacturing. According to a specific process, Copper (Cu), Nickel (Ni), Tungsten (W) and various metals are deposited on the Wafer.